this report presents the qual ification test results-on-ne272 series. 2/8 1.test device -- - ne272 ai gaas /in gaas hetero-junction fer 2.qualification tests a serres of qual ification tests consists of following rierns l)high temperature dc bias test ( h t p t ) 2)high temperature reverse bias test ( h t r b t ) the test conditions and sample size are shown in table 1. the test parameters were measured before and after the tests. bk~t resu lli the summary of qual ification test result is presented in table 3-1,3-2. l)high temperature dc bias test the followingfcondition has been adopted: vds=2v id=10ma t ch= 175c the test results are shown in table 3-1 and fig.1 (1)-fig.1(8) the test elapsed for 5000 hours under the above condition. the changes of all parameters are withjn the delta crilteria. 2)high temperature dc bias test the following condition has been adopted: vgds=. t ch= 150c '4v the test results are shown in table 3-2 and fig.2(1)-f:jg.2(8). the test elapsed for 5000 hours under the above condition. the changes of all parameters are within the delta criteria. 4.conclusion from the series of qual ification test results described above t is concluded that: l)there is no degradation up to 5000 hours at tch=l75c in high temperature dc bias test. 2) there is no degradation up to 5000 hours at tch=lsoc in high temperature reverse bias test. ne272 is qua fied for high rei iabi ity appl ications.
3/g ., table 1 test item and test concli1i.q11 table 2 delta parameters and cri~ delta criteria test condition parameter +20% 20% vds=2v, vgs=ov loss +20% 20% vos=2v, 10=10ma gm +20% ---20% vos=2v, 10=100 11 a vgs(off) -+-500na or 100% ~~hichever is greater igso vgs=- 3v +20% 20% bvgdo igo=-10 11 a +20% --20% ig f=1 11 a vgf -t. o.2db o.2db nf vos=2v, 10=10ma f=12ghz +. o.5db ---o.5db ga
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